FDMS3620S Fairchild Semiconductor, FDMS3620S Datasheet - Page 8

• Manufacturer Part Number: FDMS3620S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3620S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
1000
10
100
0.01
100
8
6
4
2
0
10
0.1
Figure 20. Gate Charge Characteristics
0.001
10
1
0
1
0.01
Figure 22. Unclamped Inductive
I
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
D
Figure 24. Forward Bias Safe
J
A
θ
= 38 A
JA
= MAX RATED
= 25
20
0.01
= 120
V
Switching Capability
o
V
DD
C
DS
t
AV
o
0.1
Operating Area
= 10 V
C/W
, DRAIN to SOURCE VOLTAGE (V)
Q
, TIME IN AVALANCHE (ms)
DS(on)
g
40
, GATE CHARGE (nC)
0.1
V
60
DD
T
1
J
T
1
= 15 V
J
= 125
= 25
V
DD
80
o
o
C
C
10
= 13 V
T
10
J
= 100
100
100
o
100 ms
100 us
1 ms
10 ms
C
1 s
10 s
DC
120
1000
100
8
T
J
= 25°C unless otherwise noted
10000
1000
10000
Figure 23. Maximum Continuous Drain
100
1000
210
180
150
120
Figure 25. Single Pulse Maximum Power
10
100
90
60
30
0.1
10
0
0.1
1
25
10
f = 1 MHz
V
Figure 21. Capacitance vs Drain
-4
Current vs Case Temperature
GS
R
θ
JC
= 0 V
10
= 1.7
V
V
-3
DS
50
GS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
= 4.5 V
C
C/W
, CASE
10
Dissipation
V
-2
GS
t, PULSE WIDTH (s)
= 10 V
75
1
10
TEMPERATURE (
-1
100
1
SINGLE PULSE
R
T
A
θ
JA
= 25
= 120
10
www.fairchildsemi.com
o
C )
o
125
C
10
o
C/W
100
C
C
C
oss
rss
iss
150
30
1000