FDMS3620S Fairchild Semiconductor, FDMS3620S Datasheet - Page 7

• Manufacturer Part Number: FDMS3620S
• Description: This device includes two specialized N-Channel MOSFETs in a dual PQFN package
• Manufacturer: Fairchild Semiconductor

FDMS3620S Rev.C
©2012 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
150
120
150
120
90
60
30
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
1.0
0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
= 38 A
-50
= 5 V
= 10 V
vs Junction Temperature
V
DS
V
T
T
-25
,
GS
J
J
1.5
,
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
= 150
JUNCTION TEMPERATURE (
0.3
0
V
V
V
V
o
GS
GS
GS
GS
C
= 10 V
= 4.5 V
= 3.5 V
= 3 V
25
μ
s
2.0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
50
J
= -55
0.6
T
75
J
o
= 25
C
2.5
o
100 125 150
o
C )
V
C
GS
= 2.5 V
μ
s
0.9
3.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
200
100
10
6
5
4
3
2
1
0
5
4
3
2
1
0
Figure 17. On-Resistance vs Gate to
1
Forward Voltage vs Source Current
0
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
SD
0.2
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
30
V
T
GS
J
= 2.5 V
Source Voltage
I
D
4
= 150
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
o
C
60
V
T
J
GS
= -55
0.6
= 4.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
o
I
T
T
D
J
C
J
J
= 38 A
= 125
90
= 25
= 25
0.8
o
o
o
C
C
C
V
GS
8
V
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120
V
GS
1.0
= 3 V
GS
= 3.5 V
= 10 V
μ
μ
s
s
1.2
150
10