BUZ11 Fairchild Semiconductor, BUZ11 Datasheet - Page 2

• Manufacturer Part Number: BUZ11
• Description: This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
Continuous Drain Current
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
1. T
2. Pulse Test: Pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 125
PARAMETER
PARAMETER
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 30
T
o
C
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 25
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
r
BV
t
DS(ON)
t
o
d(OFF)
C
C
I
GS(TH)
R
R
Q
I
I
d(ON)
C
V
SDM
I
C, Unless Otherwise Specified
DSS
GSS
g fs
SD
OSS
RSS
t
θ JC
SD
ISS
θ JA
RR
DSS
t
t
rr
r
f
T
T
T
T
V
I
V
T
T
V
I
V
V
R
V
D
D
C
C
J
J
R
GS
J
J
GS
DS
CC
DS
L
= 250 µ A, V
= 15A, V
= 25
= 25
= 25
= 125
= 25
= 25
= 10 Ω
= 30V
= V
= 20V, V
= 25V, I
= 30V, I
= 25V, V
o
o
o
o
o
C, I
C, I
DS
C, V
o
C
C
BUZ11
C, V
, I
GS
SD
SD
D
D
DS
D
GS
DS
GS
DS
TEST CONDITIONS
TEST CONDITIONS
= 10V (Figure 8)
= 15A (Figure 11)
≈
= 1mA (Figure 9)
= 60A, V
= 30A, dI
= 50V, V
3A, V
= 0V
= 0V, f = 1MHz (Figure 10)
= 0V
= 50V, V
GS
GS
SD
GS
= 10V, R
GS
/dt = 100A/ µ s,
= 0V
= 0V
= 0V
J,
T
GS
DGR
STG
pkg
DM
DS
GS
D
D
= 50 Ω,
L
-55 to 150
55/150/56
BUZ11
MIN
MIN
2.1
50
4
120
± 20
300
260
-
-
-
-
-
0.6
-
-
-
-
-
-
-
-
-
-
-
50
50
30
75
E
≤ 1.67
1500
TYP
0.03
≤ 75
TYP
0.25
100
180
130
750
250
200
1.7
20
10
30
70
3
8
-
-
-
MAX
1000
2000
1100
MAX
0.04
250
100
110
230
170
400
120
2.6
45
30
4
-
-
-
-
UNITS
W/
o
o
o
W
BUZ1 Rev. A
V
V
A
A
V
C
C
C
o
UNITS
UNITS
C
o
o
C/W
C/W
µ A
µ A
µ C
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V