BUZ11 Fairchild Semiconductor, BUZ11 Datasheet - Page 4

• Manufacturer Part Number: BUZ11
• Description: This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
10
10
10
10
20
15
10
-1
-2
5
0
0
0.08
0.06
0.04
0.02
1
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
0
V
C
C
C
DS
FIGURE 6. TRANSFER CHARACTERISTICS
GS
ISS
RSS
OSS
I
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-50
D
= 25V
= 0V, f = 1MHz
= 15A, V
= C
1
JUNCTION TEMPERATURE
= C
≈ C
GS
GD
V
DS
V
DS
GS
+ C
T
+ C
10
GS
2
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
GD
GD
= 10V
0
3
20
4
50
5
Unless Otherwise Specified (Continued)
30
100
o
6
C)
C
C
C
ISS
OSS
RSS
7
150
40
8
BUZ11
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
10
0.15
0.10
0.05
8
6
4
2
0
4
3
2
1
0
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
-50
0
DS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 25V
= 5V
VOLTAGE AND DRAIN CURRENT
TEMPERATURE
T
J
5
, JUNCTION TEMPERATURE (
0
I
D
I
, DRAIN CURRENT (A)
D
20
, DRAIN CURRENT (A)
T
10
J
50
= 25
o
C
40
o
100
15
C)
5.5V
6.5V
7.5V
V
I
D
10V
20V
DS
6V
7V
8V
9V
= 1mA
BUZ1 Rev. A
= V
GS
150
60
20