BUZ11 Fairchild Semiconductor, BUZ11 Datasheet - Page 3

• Manufacturer Part Number: BUZ11
• Description: This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
10
10
10
10
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
3
2
1
0
10
0
0
T
T
SINGLE PULSE
0.01
C
J
0.1
= MAX RATED
= 25
1
10
TEMPERATURE
-5
25
o
C
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
V
DS
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
T
A
, CASE TEMPERATURE (
50
10
-4
10
75
1
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
Unless Otherwise Specified
o
C)
10
125
-3
100µs
10ms
100ms
DC
2.5µs
10µs
1ms
t, RECTANGULAR PULSE DURATION (s)
10
150
2
BUZ11
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
40
30
20
10
60
50
40
30
20
10
0
0
0
0
V
GS
P
D
FIGURE 5. OUTPUT CHARACTERISTICS
> 10V
= 75W
CASE TEMPERATURE
10
1
-1
V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
C
V
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
50
GS
2
= 20V
J
= P
3
DM
10
0
P
x Z
DM
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
θJC
1
100
/t
4
2
+ T
t
t
1
2
o
C)
C
V
V
V
V
V
V
V
V
V
5
GS
GS
GS
GS
GS
GS
GS
GS
GS
10
BUZ1 Rev. A
10V
= 8.0V
= 7.5V
= 7.0V
= 6.5V
= 6.0V
= 5.5V
= 5.0V
= 4.5V
= 4.0V
1
150
6