BUZ11 Fairchild Semiconductor, BUZ11 Datasheet - Page 5

• Manufacturer Part Number: BUZ11
• Description: This is an N-Channel enhancement mode silicon gate powerfield effect transistor designed for applications such asswitching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingtransistors requiring
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuits and Waveforms
BATTERY
V
10
10
10
10
10
GS
0
-1
3
2
1
0
12V
0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 16. GATE CHARGE TEST CIRCUIT
0.5
0.2µF
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
g(REF)
1.0
50kΩ
R
G
I
G
REGULATOR
SAMPLING
RESISTOR
CURRENT
1.5
CURRENT
0.3µF
G
T
J
= 25
R
2.0
L
Unless Otherwise Specified (Continued)
o
C
DUT
D
S
T
I
SAMPLING
RESISTOR
J
D
= 150
CURRENT
2.5
SAME TYPE
AS DUT
DUT
V
(ISOLATED
SUPPLY)
DS
o
+
-
C
V
V
DD
DS
3.0
BUZ11
0
0
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
0
0
V
V
V
15
10
DD
GS
DS
10%
5
0
0
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
I
D
I
g(REF)
= 45A
FIGURE 17. GATE CHARGE WAVEFORMS
t
d(ON)
90%
Q
gs
t
50%
ON
10%
10
t
r
Q
PULSE WIDTH
g
, GATE CHARGE (nC)
Q
20
gd
Q
g(TOT)
V
DS
30
V
t
DS
d(OFF)
V
90%
GS
= 10V
t
OFF
50%
40
V
DS
t
f
10%
= 40V
BUZ1 Rev. A
90%
50