D770N Infineon Technologies, D770N Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
D770N
Manufacturer Part Number
D770N
Description
Manufacturer
Infineon Technologies
Datasheet
1.D770N.pdf
(8 pages)
Specifications of D770N
Vrrm (max)
1,200.0 - 2,000.0 V
Ifsm (max)
6,000.0 A
Ifavm/tc
767/100 (180 ° el sin)
Housing
Disc dia 42mm height 14mm / Ceramic
Features
Rectifier Diodes
N
IFBIP D AEC / 2010-01-20, H.Sandmann
Netz-Gleichrichterdiode
Erhöhung des Z
Kühlung / Cooling
kathodenseitig
cathode-sided
3.000
2.500
2.000
1.500
1.000
anodenseitig
anode-sided
Diagramme
Diagramme
Rectifier Diode
two-sided
500
beidseitig
Rise of Z
0
0,6
th DC
th DC
0,8
for sinewave and rectangular current for different current conduction angles Θ
bei sinus- und rechteckförmigen Strömen für unterschiedliche Stromflusswinkel Θ
Grenzdurchlasskennlinie / Limiting on-state characteristic i
∆Z
∆Z
∆Z
∆Z
∆Z
∆Z
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
[°C/W]
th Θ rec
th Θ rec
th Θ rec
th Θ sin
th Θ sin
th Θ sin
Datenblatt / Data sheet
1
Durchlasskennlinie
Θ = 180°
Z
Z
0,00901
0,00361
0,00448
0,00334
0,00448
0,00334
1,2
th Θ rec
th Θ sin
∆Z
D770N
th Θ rec
= Z
= Z
A 10/10
1,4
T
vj
th DC
th DC
V
= T
F
/ ∆Z
Θ = 120°
0,01554
0,00598
0,00759
0,00489
0,00759
0,00489
[V]
vj max
+ Z
+ Z
th Θ sin
1,6
th Θ rec
th Θ sin
T
vj
0,02102
0,00941
0,00985
0,00693
0,00985
0,00693
Θ = 90°
= T
1,8
vj max
F
= f(v
2
0,03004
0,01567
0,01292
0,01005
0,01292
0,01005
Θ = 60°
F
)
Seite/page
2,2
0,04867
0,02931
0,01725
0,01518
0,01725
0,01518
Θ = 30°
2,4
5/8