D770N Infineon Technologies, D770N Datasheet - Page 6
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D770N
Manufacturer Part Number
D770N
Description
Manufacturer
Infineon Technologies
Datasheet
1.D770N.pdf
(8 pages)
Specifications of D770N
Vrrm (max)
1,200.0 - 2,000.0 V
Ifsm (max)
6,000.0 A
Ifavm/tc
767/100 (180 ° el sin)
Housing
Disc dia 42mm height 14mm / Ceramic
Features
Rectifier Diodes
N
IFBIP D AEC / 2010-01-20, H.Sandmann
Netz-Gleichrichterdiode
1400
1200
1000
800
600
400
200
180
160
140
120
100
Rectifier Diode
80
60
40
20
0
0
0
0
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T
100
100
200
200
Durchlassverlustleistung / On-state power loss P
Datenblatt / Data sheet
f
f
300
300
Beidseitige Kühlung / Two-sided cooling
Beidseitige Kühlung / Two-sided cooling
Durchlassverluste
e
e
Tc beidseitig
d
d
400
400
D770N
A 10/10
I
FAV
I
FAV
500
500
[A]
[A]
c
c
b
b
600
600
Parameter:
a - DC
b - sin 180°el (M 1 , M 2 , B 2)
c - rec 120° el (B 6 , M 3 , M 3.2)
d - rec 60°el (M 6)
e - sin 60°el (M 1 , M 2 , B 2 Gegenspannungs-
f - sin 30°el (M 1 , M 2 , B 2 Gegenspannungs-
Parameter:
a - DC
b - sin 180°el (M 1 , M 2 , B 2)
c - rec 120° el (B 6 , M 3 , M 3.2)
d - rec 60°el (M 6)
e - sin 60°el (M 1 , M 2 , B 2 Gegenspannungs-
f - sin 30°el (M 1 , M 2 , B 2 Gegenspannungs-
belastung / Reverse voltage load)
belastung / Reverse voltage load)
FAV
belastung / Reverse voltage load)
belastung / Reverse voltage load)
= f(I
700
700
FAV
)
800
800
C
= f(I
Seite/page
FAV
)
a
900
900
a
1000
1000
6/8