BSP317P Infineon Technologies, BSP317P Datasheet - Page 3

• Manufacturer Part Number: BSP317P
• Manufacturer: Infineon Technologies

Specifications of BSP317P

• Package: SOT-223
• Vds (max): -250.0 V
• Rds (on) (max) (@10v): 4,000.0 mOhm
• Rds (on) (max) (@4.5v): 5,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev.2.2
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
|V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
GS
DD
DD
DD
GS
DD
A
GS
R
F
DS
=-0.34A
=-0.43A, R
=25°C
=-125V, I
/dt=100A/µs
=0, V
=-30V, V
=-200V, I
=-200V, I
=0 to -10V
=-200V, I
=0, I
|≥2*|I
Conditions
F
DS
D
=-0.43A
|*R
F =
=-25V,
G
GS
D
D
D
DS(on)max
=6Ω
l
=-0.43A
=-0.43A,
=-0.43A
S
=-10V,
,
,
min.
0.38
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-11.6
-0.84
0.76
13.4
11.1
typ.
210
254
-0.5
-2.8
210
5.7
30
67
92
-4
-
-
BSP317P
2011­04­19
max.
-0.65 nC
-15.1
-0.43 A
-1.72
16.7
16.6
262
381
100
-5.2
-1.2
138
315
8.5
37
-
-
Unit
S
pF
ns
V
V
ns
nC