BSP317P Infineon Technologies, BSP317P Datasheet - Page 7

• Manufacturer Part Number: BSP317P
• Manufacturer: Infineon Technologies

Specifications of BSP317P

• Package: SOT-223
• Vds (max): -250.0 V
• Rds (on) (max) (@10v): 4,000.0 mOhm
• Rds (on) (max) (@4.5v): 5,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev.2.2
13 Typ. gate charge
V
parameter: I
GS
-16
-12
-10
= f (Q
V
-8
-6
-4
-2
0
0
BSP 317 P
2
Gate
D
= -0.43 A pulsed, T
4
)
6
20%
50%
80%
8
10
12
j
14
= 25°C
nC
|Q
G
|
18
Page 7
14 Drain-source breakdown voltage
V
(BR)DSS
-300
-285
-280
-275
-270
-265
-260
-255
-250
-245
-240
-235
-230
-225
V
-60
BSP 317 P
= f (T
-20
j
)
20
60
100
BSP317P
2011­04­19
°C
T
j
180