BSP317P Infineon Technologies, BSP317P Datasheet - Page 6

• Manufacturer Part Number: BSP317P
• Manufacturer: Infineon Technologies

Specifications of BSP317P

• Package: SOT-223
• Vds (max): -250.0 V
• Rds (on) (max) (@10v): 4,000.0 mOhm
• Rds (on) (max) (@4.5v): 5,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev.2.2
9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
10
10
10
10
Ω
11
9
8
7
6
5
4
3
2
1
0
-60
3
2
1
0
0
BSP 317 P
DS
= f (T
)
4
-20
D
GS
j
)
8
= -0.43 A, V
=0, f=1 MHz, T
20
12
98%
16
typ
60
20
GS
100
24
= -10 V
j
= 25°C
C
C
C
28
oss
rss
iss
°C
V
T
-V
j
DS
180
36
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
-60
1
0
0
= f (T j )
SD
BSP 317 P
)
-0.4
-20
GS
-0.8
= V
20
DS
-1.2
T
T
T
T
98%
typ.
2%
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
-1.6
60
-2
100
BSP317P
2011­04­19
-2.4
°C
T
V
V
j
SD
160
-3