BSV236SP Infineon Technologies, BSV236SP Datasheet

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BSV236SP

Manufacturer Part Number
BSV236SP
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSV236SP

Package
SOT-363
Vds (max)
-20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
175.0 mOhm
Rds (on) (max) (@2.5v)
285.0 mOhm

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSV236SP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
BSV236SP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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Part Number:
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Quantity:
4 800
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Part Number:
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Company:
Part Number:
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Quantity:
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Part Number:
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Manufacturer:
INFINEON/英飞凌
Quantity:
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Company:
Part Number:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
4 800
Feature
OptiMOS -P Small-Signal-Transistor
Type
BSV 236SP
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
JESD22-A114-HBM
D
S
Rev 1.5
ESD Class
A
A
A
A
150°C operating temperature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
Avalanche rated
dv/dt rated
=-1.5A, V
Qualified according to AEC Q101
=-1.5 A , V
Halogen-free according to IEC61249-2-21
=25°C
=70°C
=25°C
=25°C
DS
DD
=-16V, di/dt=200A/µs, T
=-10V, R
GS
Package
PG-SOT-363
=25
j
= 25 °C, unless otherwise specified
jmax
=150°C
Tape and Reel inf
H 6327:3000pcs/r.
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
Marking
X2s
-55... +150
55/150/56
Product Summary
V
R
I
Class 0
D
Value
DS
0.56
DS(on)
-1.5
-1.2
±12
9.5
-6
-6
6
PG-SOT-363
Gate
pin 3
5
BSV 236SP
2011-07-14
4
175
-1.5
-20
1
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 4
VPS05604
Drain
pin 1,2,
V
m
A
2
5,6
3

Related parts for BSV236SP

BSV236SP Summary of contents

Page 1

OptiMOS -P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package BSV 236SP PG-SOT-363 Maximum Ratings, °C, ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µA GS ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot A BSV 236SP 1.3 W 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 Safe operating area ...

Page 5

Typ. output characteristic =25° parameter µ Vgs = -3. Vgs = -3.8V Vgs = -4.5V Vgs = - ...

Page 6

Drain-source on-resistance DS(on) parameter -1 240 m 200 180 98% 160 140 typ. 120 100 80 -60 - Typ. capacitances ...

Page 7

Typ. avalanche energy par -1 - ...

Page 8

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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