BSV236SP Infineon Technologies, BSV236SP Datasheet - Page 7

• Manufacturer Part Number: BSV236SP
• Manufacturer: Infineon Technologies

Specifications of BSV236SP

• Package: SOT-363
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 175.0 mOhm
• Rds (on) (max) (@2.5v): 285.0 mOhm

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev 1.5
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
= -10 V, R
V
10
8
7
6
5
4
3
2
1
0
-60
25
BSV 236SP
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25
= -1.5 A
75
60
100
100
°C
°C
T
T
j
j
180
150
Page 7
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
10
9
8
7
6
5
4
3
2
1
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
1
Gate
D
= -1.5 A pulsed
2
)
3
4
5
BSV 236SP
2011-07-14
6
nC
|Q Gate |
8