BSV236SP Infineon Technologies, BSV236SP Datasheet - Page 3

• Manufacturer Part Number: BSV236SP
• Manufacturer: Infineon Technologies

Specifications of BSV236SP

• Package: SOT-363
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 175.0 mOhm
• Rds (on) (max) (@2.5v): 285.0 mOhm

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 1.5
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
Page 3
çV
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
GS
DD
DD
DD
GS
DD
A
GS
R
F
=-1.2A
=-1A, R
DS
=25°C
=-10V, |I
/dt=100A/µs
=0, V
=-10V, V
=-10V, I
=-10V, I
=0 to -4.5V
=-10V, I
=0, |I F | = |I D |
ç 2*çI
Conditions
DS
G
D
=6
F
D
D
D
ç*R
=-15V,
|
GS
=-1.5A
=-1.5A,
=-1.5A
=
DS(on)max
|l
=-4.5V,
D
|,
min.
2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
14.1
12.2
0.88
16.4
typ.
228
-0.4
-1.8
-3.8
-1.6
4.4
5.7
8.5
3.4
92
75
-
-
BSV 236SP
2011-07-14
max.
-0.11 A
12.7
21.1
18.3
20.5
-0.6
-2.7
-5.7
8.5
1.3
4.3
-6
-
-
-
-
-
Unit
S
pF
ns
nC
V
V
ns
nC