APT15GP60BDLG Microsemi Corporation, APT15GP60BDLG Datasheet

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APT15GP60BDLG

Manufacturer Part Number
APT15GP60BDLG
Description
Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25;
Manufacturer
Microsemi Corporation
Datasheet
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
• Ultrasoft Recovery Diode
MAXIMUM RATINGS
The POWER MOS 7
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
T
Symbol
V
V
SSOA
BV
V
V
J
V
CE(ON)
GE(TH)
I
I
I
,T
I
I
P
GEM
T
GES
CES
CM
CES
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Resonant Mode Combi IGBT
®
IGBT used in this resonant mode combi is a new generation of high
F
)
• SSOA Rated
• RoHS Compliant
1
(V
CE
Microsemi Website - http://www.microsemi.com
CE
CE
@ T
= V
= 600V, V
= 600V, V
GE
GE
C
C
C
GE
GE
= 25°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
, I
= ±20V)
C
GE
GE
GE
= 1mA, T
C
C
= 0V, I
= 0V, T
= 0V, T
= 15A, T
= 15A, T
j
Typical Applications
• Induction Heating
• Welding
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
C
= 25°C)
j
j
= 1.0mA)
= 25°C)
= 125°C)
Bridge
j
j
= 25°C)
= 125°C)
All Ratings: T
®
2
2
APT15GP60BDL(G
C
= 25°C unless otherwise specifi ed.
600V, 15A, V
MIN
600
3
65A @ 600V
-55 to 150
Ratings
TYP
G
4.5
2.2
2.1
600
±20
±30
250
300
56
27
65
C
CE(ON)
E
G
2750
±100
MAX
275
2.7
= 2.2V Typical
.
6
C
E
Amps
Watts
UNIT
UNIT
Volts
Volts
μA
nA
°C
)

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APT15GP60BDLG Summary of contents

Page 1

Resonant Mode Combi IGBT ® The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic Input Capacitance C ies Output Capacitance C oes Reverse Transfer Capacitance C res Gate-to-Emitter Plateau Voltage V GEP 3 Q Total Gate Charge g Gate-Emitter Charge Q ge Gate-Collector ("Miller") Charge Q gc SSOA Switching Safe ...

Page 3

TYPICAL PERFORMANCE CURVES 15V. GE 250μs PULSE TEST <0.5 % DUTY CYCLE =25° =125° 0 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output ...

Page 4

V = 10V 15V 400V 25°C or 125° 5Ω 100 μ ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...

Page 6

APT30DL60 APT15DF60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage Collector Voltage t t d(off) f 90% 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions Switching ...

Page 7

DYNAMIC CHARACTERISTICS ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty Non-Repetitive Forward Surge Current (T FSM STATIC ...

Page 8

TYPICAL PERFORMANCE CURVES 100 T = 125° 55° 25° 0.5 1.0 1.5 2 ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 2, Forward ...

Page 9

I - Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, measured from ...

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