APT15GP60BDLG Microsemi Corporation, APT15GP60BDLG Datasheet - Page 5

• Manufacturer Part Number: APT15GP60BDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
Figure 17, Capacitance vs Collector-To-Emitter Voltage
4,000
1,000
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.60
0.50
0.40
0.30
0.20
0.10
500
100
V
Dissipated Power
50
10
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(Watts)
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.9
0.5
0.05
0.7
0.3
0.1
20
T
J
( C)
10
0.0060
30
-4
0.216
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
40
SINGLE PULSE
0.161
RECTANGULAR PULSE DURATION (SECONDS)
0.284
C
C
C
ies
T
oes
res
C
50
( C)
10
-3
Figure 20, Operating Frequency vs Collector Current
10
I
C
292
100
Figure 18, Minimim Switching Safe Operating Area
, COLLECTOR CURRENT (A)
-2
70
60
50
40
30
20
10
50
10
0
0
5
V
T
T
D = 50 %
V
R
CE
J
C
CE
G
10
= 125
= 75
= 5 W
100
, COLLECTOR TO EMITTER VOLTAGE
= 400V
°
F
f
f
P
°
C
15 20
C
max1
max 2
max
diss
200
=
=
=
=
min(f
T
t
Note:
P
E
J
R
d (on )
diss
300
Peak T J = P DM x Z θJC + T C
on 2
−
θ
25
10
JC
T
−
Duty Factor D =
max1
+
C
+
-1
P
E
t
cond
30
r
400
0.05
, f
off
+
t 1
max 2
t
d(off )
35
t 2
500
)
+
APT15GP60BDL(G)
40
t
t 1
f
/ t
600
2
45
1.0
700
50