APT15GP60BDLG Microsemi Corporation, APT15GP60BDLG Datasheet - Page 9

• Manufacturer Part Number: APT15GP60BDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25
• Manufacturer: Microsemi Corporation

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
6
2
3
di
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
M
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
/dt - Maximum Rate of Current Increase During the Trailing Portion of t rr.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
passes through zero.
Figure 10, Diode Reverse Recovery Waveform and Definitions
RRM
TO-247 (B) Package Outline
Dimensions in Millimeters and (Inches)
and t rr .
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
di
F
/dt Adjust
Figure 9. Diode Test Circuit
6.15 (.242) BSC
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Zero
V r
1
15.49 (.610)
16.26 (.640)
TRANSFORMER
CURRENT
2
D.U.T.
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
Collector (Cathode)
Gate
Emitter (Anode)
3
4
5
t rr / Q rr
Waveform
0.25 I RRM
Slope = di
6
M
/ dt