APT15GP60BDLG Microsemi Corporation, APT15GP60BDLG Datasheet - Page 8

• Manufacturer Part Number: APT15GP60BDLG
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247CS; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 25
• Manufacturer: Microsemi Corporation

TYPICAL PERFORMANCE CURVES
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
FIGURE 6, Dynamic Parameters vs Junction Temperature
4500
4000
3500
3000
2500
2000
1500
1000
1.2
0.8
0.6
0.4
0.2
300
250
200
150
100
500
100
50
FIGURE 8, Junction Capacitance vs. Reverse Voltage
90
80
70
60
50
40
30
20
10
1
0
0
0
0
FIGURE 2, Forward Current vs. Forward Voltage
1
0
0
0
-di
T
V
V
J
F
R
I
RRM
F
/dt, CURRENT RATE OF CHANGE (A/μs)
= 125°C
T
t
= 400V
Q
, ANODE-TO-CATHODE VOLTAGE (V)
RR
J
T
, JUNCTION TEMPERATURE (°C)
0.5
RR
25
J
= 25°C
T
200
V
J
T
= 125°C
R
J
= 55°C
, REVERSE VOLTAGE (V)
50
1.0
10
400
1.5
75
600
100
2.0
100
T
800
J
125
= 150°C
2.5
60A
15A
30A
1000
3.0
150
400
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
800
700
600
500
400
300
200
100
60
50
40
30
20
10
32
28
24
20
16
12
0
8
4
0
0
25
0
-di
0
-di
F
T
V
Duty cycle = 0.5
F
/dt, CURRENT RATE OF CHANGE (A/μs)
J
R
/dt, CURRENT RATE OF CHANGE (A/μs)
60A
30A
T
= 125°C
15A
= 400V
J
= 126°C
50
200
200
Case Temperature (°C)
75
400
400
100
600
30A
600
125
60A
APT15GP60BDL(G)
800
800
T
V
J
R
150
= 125°C
= 400V
15A
1000
1000
175