MSC8101ADS Freescale Semiconductor / Motorola, MSC8101ADS Datasheet - Page 43

• Manufacturer Part Number: MSC8101ADS
• Description: MSC8101 APP DEV SYSTEM
• Manufacturer: Freescale Semiconductor / Motorola

2.4 DC Electrical Characteristics
This section describes the DC electrical characteristics for the MSC8101. The measurements in Table 2-4 assume
the following system conditions:
Note: The leakage current is measured for nominal
Freescale Semiconductor
Input high voltage
Input low voltage
CLKIN input high voltage
CLKIN input low voltage
Input leakage current, V
Tri-state (high impedance off state) leakage current,
V
Signal low input current
Signal high input current
Output high voltage, I
Output low voltage, I
Notes:
Core power dissipation at 300 MHz
CPM power dissipation at 200 MHz
SIU power dissipation at 100 MHz
Core leakage power
CPM leakage power
SIU leakage power
IN
•
•
•
•
= V
DDH
T
V
V
GND
direction (for example, both
DD
DDH
1.
2.
3.
J
= 0 – 100 °C
= 1.6 V ± 5% V
= 0 V
See Figure 2-1 for undershoot and overshoot voltages.
The optimum CLKIN duty cycle is obtained when: V
Not tested. Guaranteed by design.
= 3.3 V ± 5% V
1
1
V
, all inputs except CLKIN
V
IL
OL
IH
OH
DC
= 3.2 mA
3
IN
2
3
, V
= –2 mA, except open drain pins
, V
= V
IL
IH
Characteristic
= 0.8 V
DDH
= 2.0 V
GND – 0.3 V
GND – 0.7 V
V
V
Figure 2-1.
DDH
DDH
DC
DC
Characteristic
+ 20%
+ 10%
V
GND
DDH
Table 2-4.
V
Table 2-5.
DDH
Overshoot/Undershoot Voltage for V
MSC8101 Technical Data, Rev. 19
and
V
DD
DC Electrical Characteristics
vary by ± 5 percent).
Typical Power Dissipation
Must not exceed 10% of clock period
V
DDH
ILC
= V
and
DDH
V
– V
DD
Symbol
IHC
V
V
V
or both
V
V
I
V
I
OZ
I
IHC
I
ILC
IN
OH
OL
L
H
IH
IL
.
V
DDH
IH
Symbol
P
P
and V
P
GND
GND
P
P
Min
P
CORE
and
2.0
2.5
2.4
CPM
—
—
—
—
—
LCO
LCP
SIU
LSI
V
IL
DD
DC Electrical Characteristics
must vary in the same
Typical
3.465
3.465
Max
–4.0
450
320
0.8
0.8
4.0
0.4
10
10
80
—
3
6
2
Unit
Unit
mW
mW
mW
mW
mW
mW
mA
mA
µA
µA
V
V
V
V
V
V
2-3