A43L0616AV-5 AMIC Technology, Corp., A43L0616AV-5 Datasheet

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A43L0616AV-5

Manufacturer Part Number
A43L0616AV-5
Description
5ns 200MHz/CL=3 143MHz/CL=2 512K x 16-Bit x 2banks synchronous DRAM
Manufacturer
AMIC Technology, Corp.
Datasheet
Document Title
Revision History
(May, 2001, Version 1.0)
512K X 16 Bit X 2 Banks Synchronous DRAM
Rev. No.
0.0
0.1
0.2
1.0
History
Initial issue
Add input/output capacitance specification
Add Cl2 spec for (-5, -5.5, -6)
Modify MRS Set Cycle Waveform error
Add -U for industrial operating temperature range
Final spec. release
Some AC parameter unit update
512K X 16 Bit X 2 Banks Synchronous DRAM
Issue Date
December 4, 2000
February 13, 2001
April 11, 2001
May 29, 2001
AMIC Technology, Inc.
A43L0616A
Remark
Preliminary
Final

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A43L0616AV-5 Summary of contents

Page 1

Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. History 0.0 Initial issue 0.1 Add input/output capacitance specification Add Cl2 spec for (-5, -5.5, -6) Modify MRS Set Cycle Waveform error 0.2 Add -U ...

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... Pin TSOP (II) possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications A43L0616AV ...

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Block Diagram Bank Select CLK ADD LRAS LRAS LCBR CLK (May, 2001, Version 1.0) Data Input Register 512K X 16 512K X 16 Column Decoder Latency & Burst Length Programming Register LCAS LWE Timing Register CKE CS RAS CAS 2 ...

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Pin Descriptions Symbol Name CLK System Clock Chip Select CS CKE Clock Enable A0~A10/AP Address BA Bank Select Address Row Address Strobe RAS Column Address CAS Strobe Write Enable WE Data Input/Output L(U)DQM Mask DQ Data Input/Output 0-15 Power VDD/VSS ...

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Absolute Maximum Ratings* Voltage on any pin relative to VSS (Vin, Vout ) . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Decoupling Capacitance Guide Line Recommended decoupling capacitance added to power line at board. Parameter Decoupling Capacitance between VDD and VSS Decoupling Capacitance between VDDQ and VSSQ Note: 1. VDD and VDDQ pins are separated each other. All VDD pins are ...

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AC Operating Test Conditions (VDD = 3.3V 0.3V + -40º +85º Parameter AC input levels Input timing measurement reference level Input rise and all time (See note3) Output timing ...

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AC Characteristics (continued) (AC operating conditions unless otherwise noted) Symbol Parameter t CLK low pulse width CL t Input setup time SS t Input hold time SH t CLK to output in Low-Z SLZ CLK to output t SHZ In ...

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Operating AC Parameter (AC operating conditions unless otherwise noted) Symbol Parameter t Row active to row active delay RRD(min) t RCD(min) RAS to CAS delay t Row precharge time RP(min) t RAS(min) Row active time t RAS(max) t Row cycle ...

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Simplified Truth Table Command Register Mode Register Set Refresh Auto Refresh Entry Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Addr. Auto Precharge Enable Write & Auto Precharge Disable Column Addr. Auto Precharge Enable ...

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Mode Register Filed Table to Program Modes Register Programmed with MRS Address BA A10/AP A9 Function RFU RFU W.B.L (Note 1) (Note 2) Test Mode A8 A7 Type 0 0 Mode Register Set 0 1 Vendor Use 1 0 Only ...

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Burst Sequence (Burst Length = 4) Initial address Burst Sequence (Burst Length = 8) Initial address ...

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Device Operations Clock (CLK) The clock input is used as the reference for all SDRAM operations. All operations are synchronized to the positive going edge of the clock. The clock transitions must be monotonic between VIL and VIH. During operation ...

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Device Operations (continued) Bank Activate The bank activate command is used to select a random row in an idle bank. By asserting low on RAS and desired row and bank addresses, a row access is initiated. The read or write ...

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Device Operations (continued) Auto Precharge The precharge operation can also be performed by using auto precharge. The SDRAM internally generates the timing to satisfy t (min) and “t ” for the programmed burst RAS RP length and CAS latency. The ...

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Basic feature And Function Descriptions 1. CLOCK Suspend 1) Click Suspended During Write (BL=4) CLK CMD WR CKE Masked by CKE Internal CLK DQ(CL2 DQ(CL3 Not Written Note: CLK to CLK disable/enable=1 clock 2. DQM Operation ...

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CAS Interrupt (I) 1) Read interrupted by Read (BL=4) CLK CMD RD RD ADD A B DQ(CL2) QA0 DQ(CL3) t CCD Note2 2) Write interrupted by Write (BL =2) CLK WR WR CMD t CCD Note2 ADD A B ...

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CAS Interrupt (II) : Read Interrupted Write & DQM (1) CL=2, BL=4 CLK i) CMD RD DQM DQ ii) CMD RD DQM DQ RD iii) CMD DQM DQ iv) CMD RD DQM DQ (2) CL=3, BL=4 CLK i) CMD ...

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Write Interrupted by Precharge & DQM CLK CMD WR DQM Note : 1. To inhibit invalid write, DQM should be issued. 2. This precharge command and burst write command should be of the same bank, otherwise ...

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Burst Stop & Precharge Interrupt 1) Write Interrupted by Precharge (BL=4) CLK CMD WR DQM Read Interrupted by Precharge (BL=4) CLK CMD RD DQ(CL2) DQ(CL3) 9. MRS Mode Register Set CLK Note 4 PRE CMD ...

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Clock Suspend Exit & Power Down Exit 1) Clock Suspend (=Active Power Down) Exit CLK CKE Internal Note 1 CLK CMD 11. Auto Refresh & Self Refresh Note 3 1) Auto Refresh CLK Note 4 CKE PRE Internal CLK ...

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About Burst Type Control Sequential counting Basic MODE Interleave counting Pseudo- Decrement Sequential Counting Pseudo- MODE Pseudo-Binary Counting Random Random column Access MODE CLK CCD 13. About Burst Length Control 1 2 Basic MODE 4 8 ...

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Power On Sequence & Auto Refresh CLOCK CKE High level is necessary RAS CAS ADDR BA A10/AP WE DQM High level is necessary High-Z DQ Precharge Auto Refresh (All Banks) (May, 2001, ...

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Single Bit Read-Write-Read Cycles (Same Page) @CAS Latency=3, Burst Length CLOCK CKE *Note RCD t SH RAS CAS ...

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Note : 1. All inputs can be don’t care when CS is high at the CLK high going edge. 2. Bank active & read/write are controlled by BA Enable and disable auto precharge function are ...

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Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS t RCD RAS CAS ADDR Ra Ca0 BA A10/ DQM DQ ( RAC t *Note 3 SAC DQ ...

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Page Read & Write Cycle at Same Bank @Burst Length CLOCK CKE CS t RCD RAS CAS ADDR Ra Ca0 BA A10/ DQM DQ (CL=2) DQ (CL=3) Row Active Read (A-Bank) (A-Bank) *Note ...

Page 28

Page Read Cycle at Different Bank @Burst Length = CLOCK CKE *Note 1 CS RAS CAS RAa CAa RBb ADDR BA A10/AP RAa RBb WE DQM DQ (CL=2) DQ (CL=3) Row Active Row Active ...

Page 29

Page Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS RAa CAa ADDR BA A10/AP RAa DAa0 DAa1 DAa2 DAa3 DQ WE DQM Row Active (B-Bank) Row Active with Write (A-Bank) (A-Bank) ...

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Read & Write Cycle at Different Bank @Burst Length CLOCK CKE CS RAS CAS RAa CAa ADDR BA A10/AP RAa WE DQM DQ (CL=2) DQ (CL=3) Row Active Read (A-Bank) (A-Bank) * Note : t ...

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Read & Write Cycle with Auto Precharge I @Burst Length CLOCK CKE CS RAS CAS RAa RBb CAa ADDR BA RAa RBb A10/AP WE DQM DQ (CL=2) DQ (CL=3) Row Active Read with (A-Bank) Auto ...

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Read & Write Cycle with Auto Precharge II @Burst Length CLOCK CKE CS RAS CAS ADDR A10/AP WE DQM DQ (CL=2) DQ (CL=3) Row Active Read with (A-Bank) Auto ...

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Read & Write Cycle with Auto Precharge III @Burst Length CLOCK CKE CS RAS CAS Ra ADDR BA A10/ DQM DQ (CL=2) DQ (CL=3) Row Active Read with (A-Bank) Auto Preharge (A-Bank) * ...

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Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Burst Length = Full Page CLOCK CKE CS RAS CAS RAa CAa ADDR BA * Note 1 A10/AP RAa WE DQM DQ (CL=2) DQ (CL=3) ...

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Write Interrupted by Precharge Command & Write Burst Stop Cycle (@ Burst Length = Full Page CLOCK CKE CS RAS CAS RAa CAa ADDR BA * Note 1 A10/AP RAa WE DQM DQ DAa0 Write ...

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Burst Read Single Bit Write Cycle @Burst Length=2, BRSW CLOCK CKE CS RAS CAS RAa CAa ADDR BA A10/AP RAa WE DQM DQ DAa0 (CL=2) DQ DAa0 (CL=3) Row Active Row Active (A-Bank) (B-Bank) Write ...

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Clock Suspension & DQM Operation Cycle @CAS Latency = 2, Burst Length CLOCK CKE CS RAS CAS Ra Ca ADDR BA A10/ DQM DQ Qa0 Clock Row Active Read Suspension * Note : ...

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Active/Precharge Power Down Mode @CAS Lantency=2, Burst Length CLOCK t SS CKE * Note 1 *Note 3 CS RAS CAS ADDR BA A10/AP WE DQM DQ Precharge Power-down Entry * Note : 1. All banks ...

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Self Refresh Entry & Exit Cycle CLOCK * Note 2 CKE * Note RAS * Note 7 CAS ADDR BA A10/AP WE DQM DQ Hi-Z Self Refresh Entry * Note : ...

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Mode Register Set Cycle CLOCK CKE High *Note 2 CS RAS * Note 1 CAS * Note 3 Key Ra ADDR WE DQM DQ Hi-Z MRS New Command * Both banks precharge should be completed ...

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Function Truth Table (Table 1) Current CS RAS CAS State IDLE ...

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Function Truth Table (Table 1, Continued) Current CS RAS CAS State Write with Auto Precharge ...

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Function Truth Table for CKE (Table 2) Current CKE CKE CS State n Self Refresh ...

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... Ordering Information Part No. Cycle Time (ns) A43L0616AV-5 5 A43L0616AV-5.5 5.5 A43L0616AV-6 6 A43L0616AV-7 7 A43L0616AV-7U 7 Note for industrial operating temperature range (May, 2001, Version 1.0) Clock Frequency (MHz) Access Time 200 @ 4 143 @ 5 183 @ 5 143 @ 5 166 @ 5 125 @ ...

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Package Information TSOP 50L (Type II) Outline Dimensions Seating Plane Symbol Notes: 1. The maximum value of dimension D includes end flash. 2. Dimension E ...

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