CRF02 TOSHIBA Semiconductor CORPORATION, CRF02 Datasheet - Page 3

• Manufacturer Part Number: CRF02
• Description: Toshiba Fast Recovery Diode Silicon Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
160
140
120
100
0.1
10
80
60
40
20
12
10
1
0
8
6
4
2
0
0
0
1
Pulse test
Rectangular
α = 60°
Conduction
angle: α
waveform
0°
Instantaneous forward voltage V F
0.1
1.0
α
Average forward current I
T j = 150°C
75°C
360°
0.2
3
Surge forward current
2.0
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 6 mm × 6 mm)
Number of cycles
Ta max – I
5
0.3
25°C
3.0
120°
i
F
0.4
– v
10
F
4.0
F (AV)
0.5
180°
F (AV)
5.0
30
0.6
Ta = 25°C
f = 50 Hz
(A)
6.0
50
(V)
0.7
100
7.0
0.8
3
1000
160
140
120
100
100
1.0
0.8
0.6
0.4
0.2
80
60
40
20
10
0.001
0
0
1
0
0
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 1.2 mm × 1.2 mm,
board thickness: 1.6 t)
Rectangular
Conduction
angle: α
α = 60°
waveform
Device mounted on a ceramic board
(board size: 50 mm × 50 mm,
land size: 2 mm × 2 mm,
board thickness: 0.64 t)
0°
0.1
Average forward current I
α
Average forward current I
0.01
360°
0.2
0.2
α = 60°
0.1
Ta max – I
P
0.3
F (AV)
Time t (ms)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm,
land size: 2 mm × 2 mm)
r
120°
th (j-a)
120°
0.4
0.4
– I
1
Device mounted on
a glass-epoxy board
(board size: 50 mm × 50 mm,
land size: 6 mm × 6 mm,
board thickness: 1.6 t)
F (AV)
F (AV)
– t
180°
0.5
180°
10
F (AV)
F (AV)
0.6
0.6
Rectangular
Conduction
angle: α
waveform
0°
100
α
(A)
(A)
360°
0.7
2006-11-07
1000
0.8
0.8
CRF02