UF1010E Unisonic Technologies, UF1010E Datasheet
UF1010E
Related parts for UF1010E
UF1010E Summary of contents
Page 1
... Using high technology of UTC, UTC UF1010E has the features such as: low R , fast switching, and low gate charge. DS(ON) Like features of all HEFET power MOSFET devices’ features, UTC UF1010E can satisfy almost all the requirements of high efficient device form customers. FEATURES * R <12 mΩ @V ...
Page 2
... UF1010E ABSOLUTE MAXIMUM RATINGS PARAMETER Gate to Source Voltage Continuous (V Drain Current Avalanche Current (Note 2) Avalanche Energy Power Dissipation (T =25°C) C Junction Temperature Storage Temperature Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ...
Page 3
... UF1010E TEST CIRCUITS AND WAVEFORMS Switching Time Test Circuit 10V GS= Pulse Width≤1µs Duty Cycle≤0.1％ Unclamped Inductive Test Circuit DUT =10V 0.01Ω Gate Charge Test Circuit 2µF 50KΩ ...
Page 4
... UF1010E TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 200 400 600 0 Source to Drain Voltage,V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...