UF1010E Unisonic Technologies, UF1010E Datasheet - Page 2

• Manufacturer Part Number: UF1010E
• Description: Hexfet Power Mosfet
• Manufacturer: Unisonic Technologies

UF1010E
Gate to Source Voltage
Drain Current
Avalanche Current (Note 2)
Avalanche Energy
Power Dissipation (T
Junction Temperature
Storage Temperature
Note: 1.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient △BV
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On Resistance(Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn ON Delay Time
Turn ON Rise Time
Turn OFF Delay Time
Turn OFF Fall Time
Internal Drain Inductance
Internal Source Inductance
Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Note: Pulse width ≤ 400μs; duty cycle ≤ 2%.
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
2.
3.
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by T
T
J
=25°C, L=260μH, R
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
C
=25°C)
PARAMETER
PARAMETER
G
=25Ω, I
J(MAX)
Continuous (V
Pulsed (Note 2)
Repetitive (Note 2)
Single Pulsed (Note3)
AS
=50A
SYMBOL
V
R
BV
GS
t
C
C
t
D(OFF)
C
Q
Q
Q
I
I
GS(TH)
DS(ON)
D(ON)
V
DSS
Q
I
t
DSS
GSS
L
L
(T
=10V)
OSS
t
I
SM
RSS
t
RR
ISS
GD
R
SD
GS
F
S
RR
DSS
D
S
G
J
/△T
=25°C, unless otherwise specified)
J
V
V
V
V
Reference to 25°C, I
V
V
V
I
V
V
T
T
di/dt=100A/μs
D
J
J
GS
DS
DS
GS
DS
GS
DS
DD
GS
SYMBOL
SYMBOL
=25°C,I
=50A,V
= 25°C, I
=0 V, I
=60 V,V
=48 V,V
=±20 V, V
=V
=10 V, I
=25 V, V
V
=30V,I
= 10V
T
TEST CONDITIONS
E
I
θ
θ
I
P
E
T
GSS
I
DM
STG
AR
AR
JA
D
Jc
GS
D
AS
J
, I
F
DS
D
D
=50A,
D
=250 μA
=250 μA
D
GS
GS
S
GS
=48V,V
=50A,R
=50 A
= 50A,V
DS
=0 V
=0 V,T
=0 V,f=1MHz
=0 V
MIN
GS
G
D
J
=150°C
GS
=1 mA
=3.6Ω
=10V
= 0V
-55 ~ +175
RATINGS
1180
+175
TYP
±20
330
200
84
50
17
MIN
2.0
60
Power MOSFET
0.064
3210
MAX
TYP MAX UNIT
0.75
690
140
220
7.5
12
78
48
53
73
62
4.5
±100
QW-R502-306.A
250
130
330
110
330
4.0
1.3
25
12
28
44
84
UNIT
°C/W
°C/W
UNIT
mJ
mJ
°C
°C
W
V
A
A
V/°C
2 of 4
mΩ
nC
nC
nC
nH
nH
nC
μA
μA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
A
A