UF1010E Unisonic Technologies, UF1010E Datasheet - Page 4

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UF1010E

Manufacturer Part Number
UF1010E
Description
Hexfet Power Mosfet
Manufacturer
Unisonic Technologies
Datasheet
UF1010E
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
10
8
6
4
2
0
TYPICAL CHARACTERISTICS
0
Drain Current vs. Source to Drain Voltage
UNISONIC TECHNOLOGIES CO., LTD
Source to Drain Voltage,V
200
www.unisonic.com.tw
400
600
SD
(mV)
800
1000
24
20
16
12
Drain-Source On-State Resistance Characteristics
8
0
4
0
Drain to Source Voltage, V
0.1
0.2
V
Power MOSFET
I
GS
d
=20A
0.3
=10V,
DS
(V)
0.4
QW-R502-306.A
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