HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 11

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

Software Command Definition
Command
Read array (memory) Write
Read identifier codes Write
Read status register
Clear status register
Page program*
Block erase
Suspend
Resume
Read lock bit status
Lock bit
program/confirm
Erase all unlocked
blocks
Notes: 1. In the word mode, upper byte data (I/O8 to I/O15) is ignored.
2. IA = Identifier address, A0 = V
3. SRD = Status register data
4. WA = Write address, WD = Write data
5. BYTE = V
6. BA = Block address (A12 to A18), (Addresses except block address must be V
7. I/O6 provides block lock status, I/O6 = 1: Block unlocked, I/O6 = 0: Block locked.
BYTE = V
to A6. Page size is 256 byte (256-byte
BYTE = V
A6. Page size is 128 word (128-word
5
IL
IL
IH
: A-1, A1 to A18 = V
: Write address and write data must be provided sequentially from 00H to FFH for A-1
First bus cycle
Operati on
mode
Write
Write
Write
Write
Write
Write
Write
Write
Write
: Write address and write data must be provided sequentially from 00H to 7FH for A0 to
Address
IL
(Manufacture code), A0 = V
Data
(I/O7 to
I/O0)*
FFH
90H
70H
50H
41H
20H
B0H
D0H
71H
77H
A7H
IL
, BYTE = V
1
HN29WT800 Series, HN29WB800 Series
16-bit).
Second bus cycle
Operati on
mode
Read
Read
Write
Write
Read
Write
Write
8-bit).
IH
: A1 to A18 = V
Address
IA*
WA0*
BA*
BA
BA
2
6
4
IH
(Device code), ID = ID code,
IL
Data
(I/O7
to I/O0)
ID*
SRD*
WD0*
D0H
I/O6*
D0H
D0H
.
2
7
3
4
Third bus cycle
Operati on
mode
Write
IH
)
Address
WA1
Data
(I/O7
to I/O0)
WD1
11