HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 37

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

Revision Record
Rev.
0.0
1.0
Date
Jun. 14, 1996
May. 9, 1997
Contents of Modification
Initial issue
Deletion of HN29WT/WB800FP Series
Addition of Top Boot Block Address Map
Software Command Definition
Deletion of Block Locking (SOP Package)
Change of Status Register Data (SRD)
DC Characteristics
AC Characteristics
Erase and program performance
Change of Full Status Check Procedure and
Addition of Data Protection Operation
Deletion of Sleep command
Deletion of notes8
V
V
Test Conditions (HN29WT/WB800-10/12):
Change of parameter name: t
Deletion of t
t
t
Main block write time max: 38.4 s to 20.4 s
Page write time max: 120 ms to 80 ms
PS
DAP
LKO
LKO
and Bottom Boot Block Address Map
1TTL gate + 50 pF to 1TTL gate + 100 pF
Operation Status and Effective Command
min: 0/0/0 ns 500/500/500 ns
max: 120/120/120 ms to 80/80/80 ms
min: 1.5 V to 1.2 V
max: 2.5 V to —
RP
HN29WT800 Series, HN29WB800 Series
RWH
to t
PS
Drawn by
K. Izawa
Approved by
T. Muto
37