HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 22

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29WT800 Series, HN29WB800 Series
Erase and Program Performance
Parameter
Main block write time (Page mode)
Page write time
Block erase time
Note: Typical values at V
Page Program Timing Waveform (WE control)
22
BYTE = High
BYTE = Low
(A-1 to A6)
RDY/Busy
(A0 to A6)
A7 to A18
BYTE
V
WE
WP
OE
CE
RP
I/O
HH
t
t
PS
CS
t
WC
t
WP
CC
41H
= 3.3 V, Ta = 25˚C. These values exclude system level overhead.
t
WPH
t
CH
t
00H
00H
AS
t
t
DS
BS
Din
t
DH
t
AH
Min
—
—
—
Address valid
01H
01H
Din
02H to 7EH
02H to FEH
Din
Typ
6.4
25
50
t
FFH
7FH
t
WPS
BLS
Din
t
WHRL
Page program
t
BH
t
t
Max
20.4
80
600
OEH
DAP
Read status
t
register
CE
t
t
t
SRD
OE
WPH
BLH
Unit
s
ms
ms
array command
Write read
FFH