HN29WB800 Renesas Electronics Corporation., HN29WB800 Datasheet - Page 12

• Manufacturer Part Number: HN29WB800
• Description: 1048576-word X 8-bit / 524288-word X 16-bit Cmos Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29WT800 Series, HN29WB800 Series
Block Locking
RP
V
V
V
V
V
Note: I/O6 provided lock status of each block after writing the Read lock status command (71H). WP pin
Status Register Data (SRD)
Symbol
SR. 7 (I/O7)
SR. 6 (I/O6)
SR. 5 (I/O5)
SR. 4 (I/O4)
SR. 3 (I/O3)
SR. 2 (I/O2)
SR. 1 (I/O1)
SR. 0 (I/O0)
Note: The RDY/Busy is an open dran output pin and indicates status of the internal WSM. When low, it
12
IL
HH
IH
IH
IH
must not be switched during performing Read/Write operations or WSM busy (WSMS = 0).
indicates that the WSM is Busy performing an operation. A pull-up resistor of 10k
required to allow the RDY/Busy signal to transition high indicating a Ready WSM condition.
I/O3 indicates the block status after the page programming. When I/O3 is High, the page has the over-
programmed cell. If over-program occures, the device is block failed. However, if I/O3 is High, please
try the block erase to the block. The block may revive.
WP
V
V
V
Function
Write state machine status 1 = Ready
Suspend status
Erase status
Program status
Block status after program 1 = Error
Reserved
Reserved
Reserved
IL
IL
IH
Lock bit (internally) Write protection provided
0
1
Definition
1 = Suspend
1 = Error
1 = Error
The function and the definition for these bits are to be
determined. These bits should be masked out when the
status register is polled.
All blocks locked (Deep powerdown mode)
All blocks unlocked
Blocks locked (Depend on lock bit data)
Blocks unlocked (Depend on lock bit data)
All blocks unlocked
0 = Busy
0 = Operation in progress/completed
0 = Successful
0 = Successful
0 = Successful
to 100k
is