MP4412 TOSHIBA Semiconductor CORPORATION, MP4412 Datasheet - Page 3

• Manufacturer Part Number: MP4412
• Description: Silicon N Channel Mos Type Four L2-pi-mosv Inone
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Flyback-Diode Rating and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward current
Reverse current
Reverse voltage
Forward voltage
Characteristics
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
V
R
Symbol
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
I
V
Q
V
t
t
Q
V
DSF
DR
t
FM
I
oss
on
off
rss
t
t
iss
rr
R
gs
gd
th
fs
r
f
R
rr
F
g
|
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
I
I
I
dI
V
I
I
D
D
DR
DR
R
F
GS
DS
DS
GS
GS
DS
DS
IN
DD
R
DR
V
= 2 A
= 10 mA, V
= 5 A
= 100 μA
: t
= 100 A
GS
= 5 A, V
= 5 A, V
/dt = 50 A/μs
= 100 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 80 V, V
10 V
r
, t
0 V
3
f
(Ta = 25°C)
< 5 ns, duty ≤ 1%, t
D
GS
GS
Test Condition
Test Condition
Test Condition
D
D
D
GS
= 2.5 A
GS
GS
= 1 mA
= 2.5 A
GS
= 2.5 A
DS
= 0 V
= 0 V
= 0 V
= 0 V
= 10 V
(Ta = 25°C)
―
―
―
= 0 V
= 0 V
I
D
V
= 2.5 A
DD
≈ 50 V
w
= 10 μs
V
OUT
100
100
Min
Min
Min
0.8
2.0
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
0.22
0.17
Typ.
0.28
Typ.
500
190
195
160
4.5
80
17
25
50
22
15
―
―
―
―
―
―
―
―
―
―
―
7
2006-10-27
0.30
0.23
−1.7
Max
Max
Max
±10
100
2.0
0.4
2.3
20
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
MP4412
5
5
Unit
Unit
Unit
μA
μA
nC
nC
nC
μC
μA
pF
pF
pF
μs
ns
Ω
V
V
S
A
A
V
A
V
V