MP4412 TOSHIBA Semiconductor CORPORATION, MP4412 Datasheet - Page 7

• Manufacturer Part Number: MP4412
• Description: Silicon N Channel Mos Type Four L2-pi-mosv Inone
• Manufacturer: TOSHIBA Semiconductor CORPORATION

160
120
80
40
6
4
2
0
0
8
0
0
(4)
(3)
(2)
(1)
Total power dissipation P
40
Ambient temperature Ta (°C)
2
(1)
300
100
0.3
30
10
0.001
(2) (3) (4)
3
1
Curves should be applied in thermal
limited area. (Single nonrepetitive pulse)
The figure shows thermal resistance per
device versus pulse width.
ΔT
80
4
P
DT
ch
– P
– Ta
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
120
DT
0.01
6
Circuit board
Circuit board
DT
160
(W)
8
0.1
200
10
Pulse width t
r
th
– t
1
7
-No heat sink/Attached on a circuit board-
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
w
w
Peak I
V
DD
(s)
= 25 V, L = 11.6 mH
200
160
120
80
40
AR
0
25
−15 V
10
15 V
= 5 A, R
TEST CIRCUIT
(1)
50
Channel temperature T
G
= 25 Ω
Circuit board
100
(3)
(2)
75
E
AS
(4)
– T
Ε
AS
TEST WAVE FORM
V
ch
100
DD
1000
=
B
1
2
ch
VDSS
·L·I
I
AR
2
(°C)
·
125
⎛
⎜
⎜
⎝
B
VDSS
B
2006-10-27
V
VDSS
DS
MP4412
−
150
V
DD
⎞
⎟
⎟
⎠