MP4412 TOSHIBA Semiconductor CORPORATION, MP4412 Datasheet - Page 6

• Manufacturer Part Number: MP4412
• Description: Silicon N Channel Mos Type Four L2-pi-mosv Inone
• Manufacturer: TOSHIBA Semiconductor CORPORATION

3000
1000
500
300
100
0.5
0.4
0.3
0.2
0.1
50
30
10
80
60
40
20
−80
0
0
0.1
0
V GS = 4 V
Common source
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Dynamic Input/Output Characteristics
V DS
10 V
0.3 0.5
−40
Common source
I D = 5 A
Tc = 25°C
Drain-source voltage V
8
Case temperature Tc (°C)
Total gate charge Q
Capacitance – V
V GS
0
1
R
DS (ON)
16
40
3
1.3
20
5
– Tc
1.3
V DD = 80 V
g
80
10
24
DS
DS
2.5
(nC)
C iss
40
C oss
C rss
I D = 5 A
2.5
(V)
120
30 50
I D = 5 A
32
160
100
16
12
8
4
0
6
0.5
0.3
0.1
0.3
0.1
30
10
30
10
5
3
1
−80
5
4
3
2
1
0
3
1
0
1
I DP max
I D max
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
Tc = 25°C
10
−40
1
3
−0.4
Drain-source voltage V
Drain-source voltage V
10 ms*
Case temperature Tc (°C)
3
Safe Operating Area
100 ms*
0
10
−0.8
I
DR
V
1 ms*
V GS = 0, −1 V
th
– V
40
– Tc
30
DS
−1.2
100 μs*
80
Common source
Tc = 25°C
DS
DS
100
Common source
V DS = 10 V
I D = 1 mA
(V)
(V)
−1.6
120
300
2006-10-27
MP4412
−2.0
160