NDH831N Fairchild Semiconductor, NDH831N Datasheet

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NDH831N

Manufacturer Part Number
NDH831N
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Absolute Maximum Ratings T
____________________________________________________________________________________________
© 1997 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
General Description
DSS
GSS
D
J
NDH831N
N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and portable electronics where fast
switching, low in-line power loss, and resistance to transients
are needed.
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
A
= 25°C unless otherwise noted
(Note 1a)
(Note 1)
(Note 1c)
(Note 1a)
(Note 1b)
(Note 1a)
Features
5.8A, 20V. R
High density cell design for extremely low R
Enhanced SuperSOT
package with high power and current handling capability.
5
6
8
7
R
DS(ON)
DS(ON)
NDH831N
-55 to 150
TM
= 0 . 0 3
5.8
1.8
0.9
-8 small outline surface mount
= 0 . 0 4
20
20
70
20
8
1
@ V
@ V
GS
4
3
1
2
GS
DS(ON)
= 4.5V
= 2.7V.
.
July 1996
NDH831N Rev. D
Units
°C/W
°C/W
W
°C
V
V
A

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NDH831N Summary of contents

Page 1

... NDH831N 20 8 5.8 (Note 1a) 20 1.8 (Note 1a) 1 (Note 1b) 0.9 (Note 1c) -55 to 150 70 (Note 1a) 20 (Note 1) July 1996 @ 2.7V DS(ON Units °C °C/W °C/W NDH831N Rev. D ...

Page 2

... 5 4 Min Typ Max 55°C J 100 -100 0.4 0 125°C 0.3 0.35 0.8 J 0.022 0. 125°C 0.03 0.54 J 0.027 0. 720 430 155 19.5 28 1.8 5.5 NDH831N Rev. D Units V µA µ ...

Page 3

... C/W when mounted on a 0.005 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. = 25°C unless otherwise noted) A Conditions 1.5 A (Note Min Typ Max Units 1.5 A 0.75 1 guaranteed NDH831N Rev. D ...

Page 4

... Voltage and Drain Current 125°C J 25°C -55° DRAIN CURRENT (A) D Current and Temperature 250µ JUNCTION TEMPERATURE (°C) J Temperature. 5 NDH831N Rev. D ...

Page 5

... Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( GATE CHARGE (nC off t t d(off PULSE WIDTH 1.4 15V 10V INVERTED NDH831N Rev. D ...

Page 6

... COPPER MOUNTING PAD AREA ( Maximum Steady-State See Note 25° DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDH831N Rev. D ...

Page 7

SuperSOT TM -8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label SSOT-8 Packaging Information Standard Packaging Option D84Z ( ode ) Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 500 ...

Page 8

... SSOT-8 Reel Configuration: Figur e 4.0 Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.50 1.75 10.25 5.50 8.0 +/-0.10 +/-0. +/-0.05 +/-0 ...

Page 9

SuperSOT TM -8 Tape and Reel Data and Package Dimensions, continued SuperSOT -8 (FS PKG Code 34, 35 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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