NDH831N Fairchild Semiconductor, NDH831N Datasheet - Page 2

• Manufacturer Part Number: NDH831N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

ELECTRICAL CHARACTERISTICS (T
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSR
D(on)
D(on)
r
D(off)
f
FS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Note 2)
(Note 2)
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GEN
DS
= 5.8 A, V
= 16 V, V
= V
= 10 V, I
= 10 V, V
= 5 V,
= 0 V, I
= 8 V, V
= -8 V, V
= 4.5 V, I
= 2.7 V, I
= 4.5 V, V
= 2.7 V, V
= 6 V, I
= 4.5 V, R
GS
, I
D
D
D
DS
= 250 µA
D
GS
DS
D
= 1 A,
GS
= 250 µA
DS
DS
GS
D
= 5.8 A
GEN
= 0 V
= 5 A
= 0 V
= 4.5 V
= 5.8 A
= 0 V
= 0 V,
= 5 V
= 5 V
= 6
T
T
T
J
J
J
= 55°C
= 125°C
= 125°C
Min
0.4
0.3
20
20
5
0.022
0.027
Typ
0.35
0.03
19.5
720
430
155
0.6
1.8
5.5
14
10
30
55
20
Max
-100
0.03
0.54
0.04
100
0.8
10
20
50
80
40
28
1
1
NDH831N Rev. D
Units
µA
µA
nA
nA
nC
nC
nC
W
pF
pF
pF
ns
ns
ns
ns
V
V
A
S