NDH831N Fairchild Semiconductor, NDH831N Datasheet - Page 3

• Manufacturer Part Number: NDH831N
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Notes:
ELECTRICAL CHARACTERISTICS (T
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
S
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
qJA
a. 70
b. 125
c. 135
Scale 1 : 1 on letter size paper
R
T
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J
J A
1a
T
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
CA
A
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.005 in
C/W when mounted on a 0.026 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz copper.
R
DS ON
2
2
pad of 2oz copper.
pad of 2oz copper.
A
T
J
= 25°C unless otherwise noted)
1b
Conditions
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
1c
Min
Typ
0.75
Max
JC
1.5
1.2
is guaranteed by
NDH831N Rev. D
Units
A
V