NDB410A Fairchild Semiconductor, NDB410A Datasheet - Page 2

• Manufacturer Part Number: NDB410A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
DRAIN-SOURCE AVALANCHE RATINGS
E
I
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
AR
DSS
GSSF
GSSR
D(on)
FS
AS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(T
C
= 25°C unless otherwise noted)
(Note 1)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
f = 1.0 MHz
D
D
D
DD
GS
DS
GS
GS
GS
DS
GS
GS
GS
DS
DS
= 250 µA
= 4.5 A
= 4 A
= 0 V
= 100 V,
= V
= 10 V, I
= 25 V, V
= 25 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V,
= 10 V,
= 10 V, V
GS
,
D
D
D
= 250 µA
DS
DS
GS
= 9 A
= 4.5 A
DS
= 0 V
= 10 V
= 0 V,
= 0 V
T
T
T
T
J
J
J
J
= 125°C
= 125°C
= 125°C
= 125°C
NDP410AE
NDP410BE
NDB410AE
NDB410BE
NDP410AE
NDB410AE
NDP410BE
NDB410BE
NDP410AE
NDB410AE
NDP410BE
NDB410BE
NDP410A
NDB410A
NDP410B
NDB410B
NDP410A
NDB410A
NDP410B
NDB410B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
100
1.4
2
9
8
3
0.38
Typ
385
2.9
2.3
0.2
4.8
80
20
Max
-100
0.25
250
100
500
100
3.6
0.5
0.3
0.6
50
30
9
1
4
NDP410.SAM
Units
pF
pF
pF
mA
mJ
µA
nA
nA
A
V
V
V
A
A
S