NDB410A Fairchild Semiconductor, NDB410A Datasheet - Page 5

• Manufacturer Part Number: NDB410A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
1000
500
200
100
1.06
1.04
1.02
0.98
0.96
50
20
10
Figure 11. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
0.1
Figure 7. Breakdown Voltage
1
-50
I
D
R
0.2
Variation with Temperature.
-25
= 250µA
GEN
f = 1 MHz
V
GS
V
= 0V
DS
0
0.5
T
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
25
G
1
50
2
D
S
V
75
DD
5
R
100
L
DUT
10
125
C iss
C oss
20
150
C rss
V
(continued)
OUT
175
50
Output, V out
Input, V in
0.01
20
15
10
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage
0.1
5
0
15
10
1
0
t
0.2
d(on)
10%
I
V
Variation with Current and
Temperature.
D
GS
= 9A
= 0V
0.4
V
SD
t
50%
on
5
10%
, BODY DIODE FORWARD VOLTAGE (V)
Q
0.6
T = 125°C
t
Pulse Width
90%
J
r
g
, GATE CHARGE (nC)
25°C
10
0.8
t
d(off)
-55°C
50%
1
90%
V
DS
15
t
10%
off
= 20V
90%
1.2
NDP410.SAM
t
Inverted
f
5 0
8 0
1.4
20