NDB410A Fairchild Semiconductor, NDB410A Datasheet - Page 4

• Manufacturer Part Number: NDB410A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
1 0
8
6
4
2
0
16
12
2.8
2.4
1.6
1.2
0.8
0.4
2
8
4
0
2
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
-50
0
Figure 1. On-Region Characteristics.
V
DS
V
-25
with Temperature.
I
D
GS
= 10V
3
= 4.5A
= 10V
V
GS
0
2
V
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
4
, DRAIN-SOURCE VOLTAGE (V)
25
V
GS
= 20V
T = -55°C
50
J
5
4
75
1 2 1 0
25
100
6
8.0
7.0
125
6
125
6.0
7
150
5.0
175
8
8
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
1
2
1
0
-50
Figure 4. On-Resistance Variation with
Figure 6. Gate Threshold Variation
Figure 2. On-Resistance Variation with
2
1
0
0
V
GS
-25
Drain Current and Temperature.
with Temperature.
Gate Voltage and Drain Current.
= 10V
V
GS
0
4
T , JUNCTION TEMPERATURE (°C)
= 5V
4
J
2 5
T = 125°C
I
I
D
J
D
, DRAIN CURRENT (A)
, DRAIN CURRENT (A)
5 0
8
8
7 5
25°C
6.0
1 0 0
-55°C
7.0
1 2
12
V
I
1 2 5
D
DS
8.0
= 250µA
= V
1 0
1 2
1 5 0
GS
NDP410.SAM
2 0
1 7 5
1 6
16