NDB410A Fairchild Semiconductor, NDB410A Datasheet - Page 3

• Manufacturer Part Number: NDB410A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
(Note 2)
t
I
THERMAL CHARACTERISTICS
R
R
Notes:
1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
D(ON)
r
D(OFF)
f
S
SM
rr
rr
SD
g
gs
gd
JC
JA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 2)
(T
C
Conditions
V
V
V
I
V
V
dI
D
I
= 25°C unless otherwise noted)
S
DD
GS
DS
GS
GS
S
= 9 A, V
/dt = 100 A/µs
= 4.5 A
= 80 V,
= 50 V, I
= 10 V, R
= 0 V,
= 0 V, I
GS
S
D
= 10V
= 9 A,
GEN
= 9 A,
= 24
T
J
= 125°C
NDP410AE
NDB410AE
NDP410BE
NDB410BE
NDP410AE
NDB410AE
NDP410BE
NDB410BE
NDP410A
NDB410A
NDP410B
NDB410B
NDP410A
NDB410A
NDP410B
NDB410B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
11.6
0.87
0.75
Typ
7.5
2.3
29
26
24
85
5
6
Max
62.5
120
1.3
1.2
20
50
45
45
17
36
32
9
8
9
3
NDP410.SAM
Units
°C/W
°C/W
nC
nC
nC
nS
nS
nS
nS
ns
A
A
A
A
V
V
A