PHB23NQ10LT NXP Semiconductors, PHB23NQ10LT Datasheet
PHB23NQ10LT
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PHB23NQ10LT Summary of contents
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... PHB23NQ10LT N-channel TrenchMOS logic level FET Rev. 01 — 11 July 2006 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data ...
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... pulsed unclamped inductive load 14 starting Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET Min - - - and 3 - Figure 2 - Figure © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... I der (%) 150 200 Fig 2. Normalized continuous drain current DSon Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET 100 150 ------------------- - 100 % der function of mounting base temperature ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PHB23NQ10LT_1 Product data sheet N-channel TrenchMOS logic level FET Conditions Figure 4 minimum footprint, FR4 board - Rev. 01 — 11 July 2006 PHB23NQ10LT Min Typ Max Unit - - 1.5 K K/W 003aab112 ...
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... 1 see Figure /dt = 100 Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET Min Typ Max 100 - - and 10 1 1 2 ...
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... V (V) DS Fig 6. Drain-source on-state resistance as a function 003aab115 (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET 160 2 ( DSon 120 ...
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... Product data sheet 03aa33 120 180 Fig 10. Sub-threshold drain current as a function of 003aab116 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET - ( min typ - ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHB23NQ10LT_1 Product data sheet ( 175 0.3 0.6 0 Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET 003aab117 1.2 1.5 V (V) SD © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. SOT404 ...
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... Revision history Table 6. Revision history Document ID Release date PHB23NQ10LT_1 20060711 PHB23NQ10LT_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 11 July 2006 PHB23NQ10LT Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 11 July 2006 PHB23NQ10LT N-channel TrenchMOS logic level FET Trademarks © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Document identifier: PHB23NQ10LT_1 All rights reserved. Date of release: 11 July 2006 ...