PHB23NQ10LT NXP Semiconductors, PHB23NQ10LT Datasheet - Page 2

• Manufacturer Part Number: PHB23NQ10LT
• Description: Phb23nq10lt N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB23NQ10LT_1
Product data sheet
Type number
PHB23NQ10LT
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package; 3 leads
(one lead cropped)
Conditions
25 C
25 C
T
T
T
T
T
T
unclamped inductive load; I
V
T
mb
mb
mb
mb
mb
mb
j
DS
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
25 V; R
Rev. 01 — 11 July 2006
T
T
j
j
175 C
175 C; R
GS
GS
GS
= 50 ; V
Figure 1
= 10 V; see
= 10 V; see
p
p
GS
= 20 k
10 s; see
10 s
GS
D
= 14.2 A;
= 5 V; starting at
Figure 2
Figure 2
N-channel TrenchMOS logic level FET
Figure 3
and
3
PHB23NQ10LT
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
100
100
23
16
91
98
+175
+175
23
92
100
15
Version
SOT404
2 of 12
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C