PHB23NQ10LT NXP Semiconductors, PHB23NQ10LT Datasheet - Page 3

• Manufacturer Part Number: PHB23NQ10LT
• Description: Phb23nq10lt N-channel Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
PHB23NQ10LT_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
P
(A)
10
(%)
120
10
I
10
D
der
10
80
40
-1
0
3
2
1
function of mounting base temperature
T
P
0
1
mb
der
= 25 C; I
=
----------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse; V
100 %
100
Limit R
DSon
= V
150
GS
DS
= 10 V
T
03aa16
mb
/ I
10
D
( C)
200
Rev. 01 — 11 July 2006
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of mounting base temperature
I
0
der
=
10
------------------- -
I
N-channel TrenchMOS logic level FET
2
t
100 s
1 ms
10 ms
D 25 C
p
= 10 s
I
50
D
PHB23NQ10LT
100 %
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
100
V
DS
(V)
150
T
003aab111
mb
03aa24
( C)
10
200
3
3 of 12