PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 4

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PHB119NQ06T

Manufacturer Part Number
PHB119NQ06T
Description
N-channel Trenchmos Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13176
Product data
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
th(j-a)
Z th(j-mb)
(K/W)
10 -1
10 -2
1
10 -4
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Thermal characteristics
SOT78
SOT404
0.05
0.02
0.2
0.1
= 0.5
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 01 — 05 May 2004
10 -2
Conditions
Figure 4
vertical in still air
mounted on a printed-circuit
board; minimum footprint.
N-channel TrenchMOS™ standard level FET
PHP/PHB119NQ06T
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
Min
-
-
-
t p
T
t p (s)
Typ
-
60
50
03ap29
=
t p
T
t
Max
0.75
-
-
1
4 of 13
Unit
K/W
K/W
K/W

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