PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 5

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13176
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
I
Figure 13
V
Figure 11
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 25 A; V
= 20 A; dI
= 250 A; V
= 1 mA; V
= 25 A; V
Rev. 01 — 05 May 2004
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
GS
DD
S
DS
DS
D
/dt = 100 A/ s; V
GS
L
G
GS
= 25 A;
= 0 V;
= 44 V; V
DS
= V
= 25 V; f = 1 MHz;
= 1.2 ;
= 10
= 0 V
= 0 V
= 0 V
GS
Figure 12
;
Figure 9
Figure 7
N-channel TrenchMOS™ standard level FET
GS
= 10 V;
PHP/PHB119NQ06T
GS
and
and
= 0 V
10
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
55
50
2
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
-
-
2
5.8
10.6
53
12.3
17
2820 -
554
200
24
52
77
41
0.85
62
60
Max
-
-
4
-
4.4
1
500
100
7.1
14.2
-
-
-
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 13
A
A