PHB119NQ06T NXP Semiconductors, PHB119NQ06T Datasheet - Page 6

• Manufacturer Part Number: PHB119NQ06T
• Description: N-channel Trenchmos Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13176
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
I D
j
j
240
160
= 25 C
20
15
10
= 25 C
80
5
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
1
80
10 V 9 V
2
V GS = 7.5 V
160
3
8.5 V
V GS = 5 V
I D (A)
V DS (V)
03ap31
03ap32
8 V
8.5 V
10 V
8 V
7 V
6 V
9 V
240
4
Rev. 01 — 05 May 2004
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
j
a
I D
1.5
0.5
= 25 C and 175 C; V
=
75
50
25
0
2
1
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
N-channel TrenchMOS™ standard level FET
-60
---------------------------- -
R
0
DSon 25 C
R
V DS > I D x R DSon
DSon
PHP/PHB119NQ06T
0
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
T j = 175 C
60
I
D
x R
4
DSon
120
V GS (V)
25 C
T j ( C)
03ap33
03ne89
180
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