PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 2

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS
T
2 pulse width and repetition rate limited by T
December 1998
PowerMOS transistors
Avalanche energy rated
SYMBOL PARAMETER
E
E
I
SYMBOL PARAMETER
R
R
SYMBOL PARAMETER
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
L
L
C
C
C
j
AS
DSS
GSS
d(on)
r
d(off)
f
= 25 ˚C unless otherwise specified
fs
d
d
s
V
T
AS
AR
(BR)DSS
GS(TO)
th j-mb
th j-a
DS(ON)
g(tot)
gs
gd
iss
oss
rss
, I
j
(BR)DSS
AR
/ Drain-source breakdown
Non-repetitive avalanche
energy
Repetitive avalanche energy
Repetitive and non-repetitive
avalanche current
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
Drain-source breakdown
voltage
voltage temperature
coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current V
Gate-source leakage current V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
Input capacitance
Output capacitance
Feedback capacitance
2
CONDITIONS
Unclamped inductive load, I
t
V
I
avalanche = 25˚C; R
CONDITIONS
SOT78 package, in free air
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
CONDITIONS
V
V
V
V
V
V
I
V
R
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT429 package only)
Measured from source lead to source
bond pad
V
p
AR
D
DD
GS
DS
GS
DS
DS
DS
DS
GS
DD
GS
j
G
= 11 A; V
= 0.2 ms; T
max.
= 10.9 A; t
= 5.6
= V
= V
= 30 V; I
= 500 V; V
= 400 V; V
= 0 V; I
= 10 V; I
= 30 V; V
= 250 V; R
= 0 V; V
50 V; R
GS
GS
; I
; I
D
D
D
DD
DS
D
D
= 0.25 mA
= 0.25 mA
= 0.25 mA
j
GS
p
= 400 V; V
= 5.5 A
= 5.5 A
prior to avalanche = 25˚C;
GS
GS
2
DS
= 25 V; f = 1 MHz
= 2.5 s; T
D
= 50 ; V
= 22 ;
= 0 V
= 0 V; T
= 0 V
GS
= 50 ; V
GS
j
GS
j
= 125 ˚C
prior to
= 10 V
AS
= 10 V
= 10.9 A;
GS
PHB11N50E, PHW11N50E
= 10 V
MIN.
MIN.
500
2.0
MIN.
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
TYP. MAX. UNIT
1326
0.47
Product specification
182
0.1
3.0
6.5
3.5
4.5
7.5
60
45
50
60
10
75
39
11
38
92
40
96
1
7
-
-
MAX.
10.9
707
18
0.55
500
200
100
0.8
4.0
25
12
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
mJ
mJ
K/W
K/W
K/W
K/W
%/K
A
nC
nC
nC
nH
nH
nH
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A