PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 4

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1998
PowerMOS transistors
Avalanche energy rated
ID% = 100 I
100
0.1
10
I
1
Fig.2. Normalised continuous drain current.
D
120
110
100
120
110
100
10
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Peak Pulsed Drain Current, IDM (A)
0
0
RDS(on) = VDS/ ID
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
); I
40
40
= f(T
DM
single pulse; parameter t
60
60
d.c.
D
mb
Tmb / C
Tmb / C
100
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
= f(T
100
100
mb
mb
= 25 ˚C
120
120
PHP11N50E
)
tp = 10 us
GS
1 ms
10 ms
100 ms
100 us
140
140
10 V
1000
p
4
0.001
8
7
6
5
4
3
2
1
0
1.4
1.2
0.8
0.6
0.4
0.2
0.01
1
0
0
0.1
Drain Current, ID (A)
1
1E-06
0
Tj = 25 C
Drain-Source On Resistance, RDS(on) (Ohms)
4 V
Transient Thermal Impedance, Zth j-a (K/W)
Fig.4. Transient thermal impedance.
D = 0.5
0.02
Fig.5. Typical output characteristics .
0.2
0.1
0.05
Fig.6. Typical on-state resistance .
1
1E-05
Z
1
R
th j-mb
4.2V
I
Drain-Source Voltage, VDS (V)
DS(ON)
Single pulse
D
PHB11N50E, PHW11N50E
2
= f(V
1E-04
Drain Current, ID (A)
= f(t); parameter D = t
4.4V
= f(I
2
DS
3
pulse width, tp (s)
1E-03
); parameter V
4.6V
VGS = 10 V
D
); parameter V
4
3
1E-02
4.8V
5
5V
P
Product specification
D
1E-01
PHP11N50E
4
GS
tp
6
VGS = 10 V
T
PHP11N50E
GS
PHP11N50E
p
/T
4.4 V
1E+00 1E+01
4.8 V
4.2 V
D = tp/T
4.6 V
4 V
Tj = 25 C
5 V
7
Rev 1.000
5
t
8