PHB11N50E NXP Semiconductors, PHB11N50E Datasheet - Page 5

• Manufacturer Part Number: PHB11N50E
• Description: Powermos Transistors Avalanche Energy Rated
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1998
PowerMOS transistors
Avalanche energy rated
Fig.9. Normalised drain-source on-state resistance.
a = R
20
18
16
14
12
10
12
10
8
6
4
2
0
8
6
4
2
0
0
0
2
1
0
Drain current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
-60 -40
DS(ON)
Fig.7. Typical transfer characteristics.
a
Fig.8. Typical transconductance .
1
/R
-20
DS(ON)25 ˚C
I
D
g
5
fs
= f(V
Gate-source voltage, VGS (V)
2
= f(I
0
Drain current, ID (A)
GS
D
20
= f(T
); parameter T
); parameter T
3
Tj / C
40
10
j
); I
Normalised RDS(ON) = f(Tj)
60
D
4
150 C
= 5.5 A; V
80
100 120 140
5
j
15
j
Tj = 25 C
PHP11N50E
PHP11N50E
GS
Tj = 25 C
6
150 C
= 10 V
20
7
5
V
10000
1000
GS(TO)
100
Fig.12. Typical capacitances, C
10
I
C = f(V
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
4
3
2
1
0
D
0.1
-60
= f(V
VGS(TO) / V
Capacitances, Ciss, Coss, Crss (pF)
Fig.11. Sub-threshold drain current.
= f(T
0
ID / A
-40
Fig.10. Gate threshold voltage .
DS
GS)
j
); conditions: I
); conditions: V
-20
; conditions: T
PHB11N50E, PHW11N50E
Drain-source voltage, VDS (V)
1
0
1
20
2 %
max.
typ.
min.
Tj / C
40
SUB-THRESHOLD CONDUCTION
2
VGS / V
D
j
GS
= 25 ˚C; V
60
= 0.25 mA; V
= 0 V; f = 1 MHz
typ
80
Product specification
10
3
100 120 140
iss
, C
98 %
DS
PHP11N50E
oss
= V
Ciss
Coss
Crss
DS
4
, C
Rev 1.000
= V
GS
rss
100
.
GS