BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 4

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION 2.2 GHz
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Feb 10
handbook, halfpage
CW, class-AB (2-tone)
MODE OF OPERATION
UHF power LDMOS transistor
V
Fig.2
(pF)
GS
C
10
10
= 0; f = 1 MHz.
10
1
1
2
0
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
C os
C rs
C is
10
DS
f
1
= 26 V; f = 2200 MHz at rated load power.
= 2200; f
20
(MHz)
f
V DS (V)
2
= 2200.1
MGW642
30
V
(V)
26
h
DS
= 25 C; R
4
handbook, halfpage
V
f
Fig.3
1
(mA)
DS
= 2000 MHz; f
I
85
(dB)
DQ
G p
= 26 V; I
th mb-h
15
10
5
0
0
Power gain and efficiency as functions of
peak envelope load power; typical values.
DQ
= 0.4 K/W; unless otherwise specified.
10 (PEP)
= 85 mA; T
2
(W)
P
= 2000.1 MHz.
L
4
G p
h
25 C;
(dB)
>11
G
8
p
P L (PEP) (W)
BLF1822-10
Product specification
12
>30
(%)
D
D
MGW643
16
(dBc)
60
40
20
0
(%)
d
D
im
26