BLF1822-10 NXP Semiconductors, BLF1822-10 Datasheet - Page 9

• Manufacturer Part Number: BLF1822-10
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION 960 MHz
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Feb 10
handbook, halfpage
CW, class-AB (2-tone)
MODE OF OPERATION
UHF power LDMOS transistor
V
f
Fig.12 Power gain and efficiency as functions of
1
DS
(dB)
= 960 MHz; f
G p
= 26 V; I
24
20
16
12
8
4
0
0
peak envelope load power; typical values.
DQ
2
= 85 mA; T
= 960.1 MHz.
4
G p
h
8
DS
25 C;
f
1
= 26 V; f = 960 MHz at rated load power.
= 960; f
D
12
P L (PEP) (W)
(MHz)
2
f
= 960.1
16
MGW652
20
60
50
40
30
20
10
0
(%)
D
V
(V)
26
h
DS
= 25 C; R
9
handbook, halfpage
V
f
Fig.13 Intermodulation distortion as a function of
1
(mA)
DS
(dBc)
= 960 MHz; f
I
d im
85
DQ
= 26 V; I
th mb-h
20
40
60
80
0
0
peak envelope load power; typical values.
DQ
= 0.4 K/W; unless otherwise specified.
10 (PEP)
2
= 85 mA; T
= 960.1 MHz.
(W)
P
4
L
h
8
typ. 18.5
25 C;
(dB)
G
p
12
P L (PEP) (W)
BLF1822-10
Product specification
typ. 39
(%)
16
D
MGW653
d 3
d 5
d 7
20
typ. 33
(dBc)
d
im