NESG220033 Renesas Electronics Corporation., NESG220033 Datasheet - Page 2

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NESG220033

Manufacturer Part Number
NESG220033
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG220033-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
<R>
THERMAL RESISTANCE (T
RECOMMENDED OPERATING RANGE (T
ELECTRICAL CHARACTERISTICS (T
h
2
Collector Current
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure (1)
Noise Figure (2)
Associated Gain (1)
Associated Gain (2)
Reverse Transfer Capacitance
Maximum Stable Power Gain
Gain 1 dB Compression Output
Power
Output 3rd Order Intercept Point
Termal Resistance from Junction to
Ambient
FE
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
Note
2. Collector to base capacitance when the emitter grounded.
3. MSG =
Parameter
Parameter
Parameter
140 to 260
S
S
21
12
R7B
FB
A
= +25°C)
MSG
Symbol
Symbol
Symbol
⏐S
h
P
C
Rth
OIP
FE
NF1
NF2
I
I
G
G
O (1 dB)
re
CBO
EBO
f
21e
I
Note 1
T
a
a
Note 2
C
1
2
Note 3
j-a
3
2
μ
A
V
V
V
V
V
V
Z
V
Z
V
Z
V
Z
V
V
V
Z
V
Δ
s, Duty Cycle ≤ 2%
Data Sheet PU10766EJ03V0DS
= +25°C)
S
S
S
S
S
f = 1 MHz, Z
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
CE
CE
CE
MIN.
= Z
= Z
= Z
= Z
= Z
= 5 V, I
= 0.4 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
A
Sopt
Sopt
Sopt
Sopt
Sopt
= +25°C)
, Z
, Z
, Z
, Z
, Z
Ratings
E
C
C
C
C
C
C
C
E
C
C (set)
C (set)
Test Conditions
L
L
L
L
L
TYP.
260
= 0 mA
= 0 mA, f = 1 MHz
C
= 10 mA
= 40 mA, f = 1 GHz
= 40 mA, f = 1 GHz
= 10 mA, f = 1 GHz,
= 40 mA, f = 1 GHz,
= 10 mA, f = 1 GHz,
= 40 mA, f = 1 GHz,
= 40 mA, f = 1 GHz
= 50 Ω
= Z
= 50 Ω
= Z
= Z
40
S
= 0 mA
= Z
= 40 mA, f = 1 GHz,
= 40 mA, f = 1 GHz,
Lopt
Lopt
Lopt
Sopt
, Z
MAX.
L
= Z
Lopt
°C/W
Unit
Unit
mA
MIN.
11.0
10.0
12.0
140
TYP.
12.5
13.0
0.75
12.0
13.5
14.0
21.5
180
0.9
0.7
35
NESG220033
MAX.
1.15
100
100
260
0.9
GHz
dBm
dBm
Unit
nA
nA
dB
dB
dB
dB
dB
dB
pF

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